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| GaAs MMIC CGY 62 ________________________________________________________________________________________________________ Datasheet * Two-stage microwave broadband amplifier IC * 50 input / output * Operating voltage range: 2.7 to 5 V * High gain and output power (typ.: G=20 dB, P-1dB =17,5 dBm @ 4.5V, 1GHz ) * Frequency range 200 MHz ... 2.5 GHz IN GND GND 4 5 6 3 2 Interstage ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 OUT GND Type Marking Ordering code (taped) Package 1) CGY 62 Y6s Q68000-A8787 MW-6 Maximum ratings Drain voltage Channel temperature Storage temperature range Total power dissipation (TS < 70C) 2) Thermal resistance Channel-soldering point (GND) Junction-ambient 3) Symbol Unit 6 150 -55...+150 800 V C C mW VD TCh Tstg Ptot RthChS RthJA < 100 < 180 K/W K/W 1) Dimensions see chapter Package Outlines 2) Please care for sufficient heat dissipation on the pcb! 3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Siemens Aktiengesellschaft pg. 1/5 15.01.96 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 62 ________________________________________________________________________________________________________ TA = 25C VD = 4,5 V RS = RL = 50 unless otherwise specified Characteristics Drain current Power Gain f = 200 MHz to 1800 MHz f = 2500 MHz Symbol min - typ 130 max 175 Unit mA dB ID G 18 G - 19 15 2 3.5 dB dB Gain flatness f = 200 MHz to 1800 MHz Noise figure f = 200 MHz to 1800 MHz F 3.5 8 15 13 4.0 Input return loss f = 200 MHz to 500 MHz f = 500 MHz to 2500 MHz RLin dB 10 10 dB dBm 30 - Output return loss f = 200 MHz to 2500 MHz RLout IP3 Third order intercept point two-tone intermodulation test f 1= 806 MHz f2 = 810 MHz Po = -10 dBm (both carriers) Output power at 1dB gain compression f = 200 MHz to 1800 MHz P-1dB dBm 17.5 - Siemens Aktiengesellschaft pg. 2/5 15.01.96 HL EH PD 21 GaAs MMIC CGY 62 ________________________________________________________________________________________________________ Electrical characteristics at TA = 25C VD = 4.5 V RS = RL = 50 unless otherwise specified Noise figure F=f(f) VS = 4.5V 5 F [dB] 4 typ. 3 12 2 8 1 G [dB] 20 24 Power gain G=f(f) VS = 4.5V 16 typ. 4 0 0.1 0.6 1.1 1.6 2.1 f [GHz] 2.6 0 0.1 0.6 1.1 1.6 2.1 f [GHz] 2.6 Siemens Aktiengesellschaft pg. 3/5 15.01.96 HL EH PD 21 GaAs MMIC CGY 62 ________________________________________________________________________________________________________ Typical S-Parameters ( VD = 4.5 V f/GHz MAG 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 0.81 0.41 0.28 0.21 0.17 0.13 0.11 0.08 0.06 0.04 0.03 0.05 0.07 0.09 0.11 0.14 0.16 0.18 0.18 0.19 S11 ANG -42 -84 -105 -118 -124 -128 -129 -131 -134 -141 -141 -172 163 152 149 149 150 150 151 156 MAG 6.64 10.06 10.75 10.82 10.66 10.37 9.95 9.41 8.80 8.10 7.29 6.61 6.04 5.46 4.92 4.45 4.00 3.61 3.21 2.84 S21 ANG 48 4 -19 -38 -54 -71 -86 -101 -116 -130 -143 -155 -166 -178 172 161 152 142 132 126 MAG 0.006 0.010 0.011 0.011 0.012 0.013 0.013 0.014 0.015 0.015 0.015 0.016 0.018 0.019 0.021 0.022 0.024 0.026 0.027 0.028 VG = 0 V Zo = 50 ) S12 ANG 107.0 40.0 30.0 31.0 30.0 31.0 33.0 33.0 34.0 33.0 39.0 42.0 44.0 44.0 45.0 45.0 45.0 44.0 44.0 43.0 S22 MAG ANG 0.29 0.21 0.18 0.17 0.17 0.17 0.16 0.16 0.17 0.19 0.20 0.20 0.19 0.19 0.18 0.17 0.16 0.15 0.16 0.17 -19 -31 -34 -32 -32 -29 -24 -17 -9 -2 -3 0 3 4 4 1 -4 -10 -17 -29 Siemens Aktiengesellschaft pg. 4/5 15.01.96 HL EH PD 21 GaAs MMIC CGY 62 ________________________________________________________________________________________________________ Application Circuit f = 800 MHz to 1800 MHz 1 nF Vs 27 nH 3 100 pF 4 39 nH Output 50 Ohm Input 50 Ohm Interstage 1 100 pF CGY62 IN OUT GND 2,5,6 50 Ohm Microstripline Pin assignment: Pin 1 OUT Pin 2 GND Pin 3 Interstage Pin 4 IN Pin 5 GND Pin 6 GND Siemens Aktiengesellschaft pg. 5/5 15.01.96 HL EH PD 21 |
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